FDMA430NZ
Description
This Single N- Channel MOSFET has been designed using onsemi’s advanced POWERTRENCH process to optimize the RDS(on) @ VGS = 2.5 V on special Micro FETt leadframe.
Features
- RDS(on) = 40 m W at VGS = 4.5 V, ID = 5.0 A
- RDS(on) = 50 m W at VGS = 2.5 V, ID = 4.5 A
- Low Profile
- 0.8 mm Maximum in the New Package Micro FET
2x2 mm
- HBM ESD Protection Level > 2.5 k V Typical (Note 3)
- Free from Halogenated pounds and Antimony Oxides
- This Device is Pb- Free, Halide Free and is Ro HS pliant
Applications
- Li- lon Battery Pack
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS VGSS
Drain- Source Voltage
Gate- Source Voltage
Drain Current
- Continuous (Note 1a)
- Pulsed
±12
A 5.0 20
PD Power Dissipation (Steady State)
- (Note 1a)
- (Note 1b)
W 2.4 0.9
TJ, TSTG Operating and Storage Junction Temperature Range
- 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of...
