FDMA430NZ - N-Channel MOSFET

onsemi

General Description

This Single N

onsemi’s advanced POWERTRENCH process to optimize the RDS(on) @ VGS = 2.5 V on special MicroFETt leadframe.

Key Features

RDS(on) = 40 mW at VGS = 4.5 V, ID = 5.0 A.
RDS(on) = 50 mW at VGS = 2.5 V, ID = 4.5 A.
Low Profile.
0.8 mm Maximum in the New Package MicroFET 2x2 mm.
HBM ESD Protection Level > 2.5 kV Typical (Note 3).
Free from Halogenated Compounds and Antimony Oxides.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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FDMA430NZ n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMA430NZ
Manufacturer	onsemi
File Size	235.14 KB
Description	N-Channel MOSFET
Datasheet	FDMA430NZ Datasheet

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DATA SHEET www.onsemi.com MOSFET – Single, N-Channel, POWERTRENCH), 2.5 V Specified 30 V, 5.0 A, 40 mW FDMA430NZ General Description This Single N−Channel MOSFET has been designed using onsemi’s advanced POWERTRENCH process to optimize the RDS(on) @ VGS = 2.5 V on special MicroFETt leadframe. Features • RDS(on) = 40 mW at VGS = 4.5 V, ID = 5.0 A • RDS(on) = 50 mW at VGS = 2.5 V, ID = 4.5 A • Low Profile − 0.8 mm Maximum in the New Package MicroFET 2x2 mm • HBM ESD Protection Level > 2.